US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Epitaxy regions with reduced loss control" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,494, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Epitaxy regions with reduced loss control" was invented by Shahaji B. More (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a protruding semiconductor fin protruding higher than isolation regions, forming a gate stack on a first portion of the protruding semiconductor fin, recessing a second portion of the protruding semiconductor fin to form a recess between fin spacers, and forming an epitaxy region from the recess. The formation of the epitaxy region includes growing a first epitaxy layer having a first ...