US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Epitaxial features in semiconductor devices and method of manufacturing" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,532, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial features in semiconductor devices and method of manufacturing" was invented by Ting-Yeh Chen (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Po-Cheng Wang (Kaohsiung, Taiwan), De-Fang Chen (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate ...