US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Doped semiconductor structure for NIR sensors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,554, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Doped semiconductor structure for NIR sensors" was invented by Po-Chun Liu (Hsinchu, Taiwan) and Eugene I-Chun Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates a method of forming an integrated chip structure. The method includes etching a base substrate to form a recess defined by one or more interior surfaces of the base substrate. A doped epitaxial layer is formed along the one or more interior surfaces of the base substrate, and an epitaxial material is formed on horizontally and vertically ext...