US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Barrier layers in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,511, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Barrier layers in semiconductor devices" was invented by Hsin Hsiang Tseng (Hsinchu, Taiwan) and Ming-Nung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a fin base on a substrate, epitaxially growing a S/D region on the fin base, depositing a dielectric layer on the S/D region, forming a contact structure on the S/D region through the dielectric layer, removing a portion of the dielectric layer to expose si...