US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Word line booster cell and memory array" (Canadian Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,283, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Word line booster cell and memory array" was invented by Hyunsung Hong (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "Word line booster cells and memory arrays are provided. A pass-gate transistor is coupled between a first control line and a first node, and has a gate coupled to a word line. A first pull-up transistor is coupled between a power supply and the first node. The first pull-up transistor has a gate coupled to a second control line. A second pull-up transistor is coupled between the power supply and the first node. ...