US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Stepped back side deep trench isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,100, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stepped back side deep trench isolation structure" was invented by Sin-Yao Huang (Tainan, Taiwan), Sheng Chieh Chuang (Hsinchu, Taiwan), Shu Yen Kung (Tainan, Taiwan) and Shin-Sheng Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Trenches for a back side deep trench isolation (BDTI) structure are formed using two etches: a high-aspect ratio etch and a mouth etch. The trenches have an upper part (the mouth) that is wider and the lower part of the trenches. The lower part is narrower and has a higher aspect ratio than the upper ...