US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Sot MRAM having dielectric interfacial layer and method forming same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,002, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Sot MRAM having dielectric interfacial layer and method forming same" was invented by Wilman Tsai (Saratoga, Calif.), MingYuan Song (Hsinchu, Taiwan) and Shy-Jay Lin (Jhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer ov...