US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Semiconductor device including deep trench capacitors and via contacts" (California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,012, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including deep trench capacitors and via contacts" was invented by Po-Chia Lai (Fremont, Calif.) and Stefan Rusu (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, the semiconductor device includes a plurality of deep trench capacitors and a plurality of via contacts that at least partially surround the deep trench capacitors. Variations may be made to the number and locations of the plurality of via conta...