ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,065, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Yuting Cheng (Taoyuan, Taiwan), Kuan-Kan Hu (Hsinchu, Taiwan), Tzu Pei Chen (Taipei, Taiwan), Chia-Hung Chu (Taipei, Taiwan), Po-Chin Chang (Taichung, Taiwan) and Sung-Li Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first transistor over a substrate, in which the first transistor includes first source/drain epitaxy structures; forming a second transistor over the first transistor, in which the second transistor inclu...