ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,062, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Meng-Han Lin (Hsinchu, Taiwan), Wei-Cheng Wu (Hsinchu County, Taiwan) and Te-Hsin Chiu (Miaoli County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a control gate, a select gate, a charge trapping structure, a dielectric structure, and a spacer. The control gate and the select gate are over a channel region of the semiconductor substrate and separated from each other. The charge trapping structure is between the control gate and the semiconduc...