US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Self-aligned patterning layer for metal gate formation" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,072, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Self-aligned patterning layer for metal gate formation" was invented by Kenichi Sano (Hsinchu, Taiwan), Yi-Hsiu Chen (Taipei, Taiwan), Pinyen Lin (Rochester, N.Y.) and Wei-Yen Woon (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a metal gate structure of a stacked multi-gate device are provided. A method according to the present disclosure includes depositing a titanium nitride (TiN) layer over a channel region that includes bottom channel layers and top channel layers, depositing a dummy fill layer to cover ...