US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Seal ring for semiconductor device with gate-all-around transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,550, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Seal ring for semiconductor device with gate-all-around transistors" was invented by Yen Lian Lai (New Taipei, Taiwan), Chun Yu Chen (Hsinchu, Taiwan) and Yung Feng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; and a seal ring region enclosing a circuit region disposed over the substrate. The seal ring region further includes a fin ring protruding from the substrate having a first width; an isolation ring dispose...