US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Resistive random access memory device with improved bottom electrode" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,238, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive random access memory device with improved bottom electrode" was invented by Jheng-Hong Jiang (Hsinchu, Taiwan) and Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory (RRAM) device is provided. The RRAM includes: a bottom electrode via disposed in a first dielectric layer; a bottom electrode electrically connected to the bottom electrode via and protruding upwardly from the bottom electrode via in a vertical direction, wherein the bottom electrode has a tapered shape ...