ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,064, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Power reduction in finFET structures" was invented by Kuo-Cheng Ching (Zhubei, Taiwan), Chih-Hao Wang (Zhubei, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method to reduce power consumption in a fin structure. For example, the method includes forming a first and a second semiconductor fins on a substrate with different heights. The method also includes forming insulating fins between and adjacent to the first and the second semiconductor fins. Further, the method inc...