US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,019, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices" was invented by Yu-Ming Chen (Taipei, Taiwan), Szu-Ying Chen (Hsinchu, Taiwan), Yen-Chun Huang (New Taipei, Taiwan), Sen-Hong Syue (Zhubei, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a dummy gate structure over a substrate. The dummy gate structure has a dummy gate dielectric layer and a dummy gate ele...