US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Method of forming source/drain epitaxial stacks" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,041, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming source/drain epitaxial stacks" was invented by Shahaji B. More (Hsinchu, Taiwan), Huai-Tei Yang (Hsin-Chu, Taiwan), Shih-Chieh Chang (Taipei, Taiwan) and Cheng-Han Lee (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method to form silicon germanium (SiGe) source/drain epitaxial stacks with a boron doping profile and a germanium concentration that can induce external stress to a fully strained SiGe channel. The method includes forming one or more gate structures over a fin, whe...