US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Method of forming mark on semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,546, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming mark on semiconductor device" was invented by Liang-Shiuan Peng (Taipei, Taiwan) and Chih-Hung Lu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution lay...