US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Method for forming wells for semiconductor devices using implanations of increasing energy" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,070, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming wells for semiconductor devices using implanations of increasing energy" was invented by Bau-Ming Wang (Hsinchu, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan), Huicheng Chang (Hsinchu, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a first type well in a substrate; and after forming the first type well in the substrate, forming a second type well in the substrate, where the second type well has a conductivity type differ...