US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Metal gate structure cutting process" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,071, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Metal gate structure cutting process" was invented by I-Wen Wu (Hsinchu, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan), Mei-Yun Wang (Hsin-Chu, Taiwan), Chang-Yun Chang (Taipei, Taiwan), Ching-Feng Fu (Taichung, Taiwan) and Peng Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin protruding from a substrate, forming a gate structure across the fin, forming an epitaxial feature over the fin, depositing a dielectric layer covering the epitaxial feature and over sidewal...