US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Memory devices with reduced bit line capacitance and methods of manufacturing thereof" (Japanese, Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,261, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices with reduced bit line capacitance and methods of manufacturing thereof" was invented by Hidehiro Fujiwara (Hsinchu, Taiwan), Chih-Yu Lin (Taichung, Taiwan), Yuichiro Ishii (Yokohama, Japan), Makoto Yabuuchi (Tokyo), Masaya Hamada (Yokohama, Japan), Koji Nii (Tokyo) and Yen-Huei Chen (Jhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first memory cell in a 4CPP architecture; a second memory cell formed in the 4CPP architecture and physically disposed next to the first memory cel...