US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Isolation structures for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,048, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures for semiconductor devices" was invented by I-I Cheng (Tainan, Taiwan), Chen-Chieh Chiang (Kaohsiung, Taiwan), Kun-Ei Chen (Tainan, Taiwan) and Pei-Lum Ma (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device having an isolation structure with a protection layer. The semiconductor device includes a substrate, a transistor with a source/drain (S/D) structure on the substrate, and an isolation structure on the substrate and adjacent to the transistor. The isolation...