US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Isolation structure for transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,047, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation structure for transistors" was invented by Tai-Jung Kuo (Hsinchu, Taiwan), Zhen-Cheng Wu (Taichung, Taiwan), Chung-Ting Ko (Hsinchu, Taiwan), Sung-En Lin (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure according to the present disclosure includes a base fin over a substrate, a stack of nanostructures disposed directly over the base fin, a gate structure wrapping around each of the stack of nanostructures, an isolation feature disposed over the substrate and a...