US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Interconnect structure for multi-thickness semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,484, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure for multi-thickness semiconductor device" was invented by Yao-Hong You (Yunlin County, Taiwan), Dah-Chuen Ho (Zhubei, Taiwan), Kuo-Ming Wu (Hsinchu, Taiwan), Ying-De Chen (Fangliao Township, Taiwan) and Yi-Min Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method of forming an interconnect structure that eliminates a separate deep via patterning process to simplify the fabrication process. In some embodiments, a first dielectric layer is formed over a first metal line...