US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Integrated circuit structure with source/drain spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,050, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Integrated circuit structure with source/drain spacers" was invented by Ko-Cheng Liu (Hsinchu, Taiwan), Ming-Lung Cheng (Kaohsiung County, Taiwan) and Chang-Miao Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method includes receiving a semiconductor workpiece having active regions extending above a top surface of a semiconductor substrate, forming first dielectric features on first opposing sidewalls of the active regions across a first direction, forming second dielectric features extending between opposing sidewalls ...