US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Gate structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,073, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structures in semiconductor devices" was invented by Pei Ying Lai (Hsinchu, Taiwan), Chia-Wei Hsu (Taipei, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Xiong-Fei Yu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectr...