US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Gate isolation structures and methods of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,066, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate isolation structures and methods of forming the same" was invented by Siao-Jing Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes forming a first and a second fin-shaped active region over a substrate, the first and second fin-shaped active regions extending lengthwise along a first direction, forming a gate structure over channel regions of the first and second fin-shaped active regions, the gate structure ...