ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,485, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Gate contact structure" was invented by Cheng-Chi Chuang (New Taipei, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. In one embodiment, a semiconductor structure includes an active region over a substrate, a gate structure disposed over the active region, and a gate contact that includes a lower portion disposed over ...