US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Source/drain regions of FinFET devices and methods of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,240, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Source/drain regions of FinFET devices and methods of forming same" was invented by Kun-Mu Li (Zhudong Township, Taiwan), Heng-Wen Ting (Pingtung, Taiwan), Yen-Ru Lee (Hsinchu, Taiwan) and Hsueh-Chang Sung (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin over a substrate, etching the semiconductor fin to form a recess, wherein the recess extends into the substrate, and forming a source/drain region in the recess, wherein forming the source/drain region includes epitaxially growing a fir...