US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,252, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof" was invented by Chia-Jung Yu (Hsinchu, Taiwan) and Pin-Cheng Hsu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the semiconductor structure are disclosed. The semiconductor structure includes a dielectric layer and a transistor. The transistor is at least partially disposed in the dielectric layer. The transistor includes a gate electrode, a gate d...