US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Semiconductor device structure with etch stop layer for reducing RC delay" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,241, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with etch stop layer for reducing RC delay" was invented by Chung-Ting Ko (Kaohsiung, Taiwan), Bo-Cyuan Lu (New Taipei, Taiwan), Jr-Hung Li (Chupei, Taiwan) and Chi-On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a spacer element covering a first sidewall of the gate structure. The semiconductor device ...