US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 4 for "Semiconductor device including a dielectric layer between a source/drain region and a substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,748, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including a dielectric layer between a source/drain region and a substrate" was invented by Kam-Tou Sio (Hsinchu, Taiwan) and Yi-Hsun Chiu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices and methods are described herein that obviate the need for a read assist circuit. In one example, a semiconductor device includes a source region and a drain region formed above a substrate. A buried insulator (BI) layer is formed beneath either the source region or the drain region. A first nano-sheet is formed (i) horiz...