US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Semiconductor device having a Fin at a S/D region and a semiconductor contact or silicide interfacing therewith" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,136, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having a Fin at a S/D region and a semiconductor contact or silicide interfacing therewith" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor fin, a gate structure, source/drain structures, and a contact structure. The semiconductor fin extends from a substrate. The gate structure extends across the semiconductor fin. Th...