US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 4 for "Multi-gate selector switches for memory cells and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,778, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multi-gate selector switches for memory cells and methods of forming the same" was invented by Yong-Jie Wu (Hsinchu, Taiwan), Yen-Chung Ho (Hsinchu, Taiwan), Hui-Hsien Wei (Taoyuan, Taiwan), Chia-Jung Yu (Hsinchu, Taiwan), Pin-Cheng Hsu (Zhubei, Taiwan), Mauricio Manfrini (Zhubei, Taiwan) and Chung-Te Lin (Taiwan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes: first and second word lines; a high-k dielectric layer disposed on the first and second word lines; a channel layer disposed on the high-k dielectric layer ...