US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,226, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process" was invented by Chun-Hsiung Lin (Zhubei, Taiwan), Pei-Hsun Wang (Kaohsiung, Taiwan), Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan), Kuo-Cheng Ching (Zhubei, Taiwan) and Jui-Chien Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another, a sourc...