US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Method of manufacturing semiconductor devices with multiple silicide regions" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,012, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices with multiple silicide regions" was invented by Wei-Yip Loh (Hsinchu, Taiwan), Yan-Ming Tsai (Toufen Township, Taiwan), Hung-Hsu Chen (Tainan, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan) and Sheng-Hsuan Lin (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the s...