US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor" (Belgian, American Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,198, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor" was invented by Matthias Passlack (Hayward, Calif.), Marcus Johannes Henricus Van Dal (Linden, Belgium), Timothy Vasen (Tervuren, Belgium) and Georgios Vellianitis (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure is formed. The fin structure includes a plurality of stacked structures each comprising a dielectric layer, a CNT over the di...