US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 4 for "Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a fin" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,216, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a fin" was invented by Wei-Liang Lu (Hsinchu, Taiwan), Chang-Yin Chen (Taipei, Taiwan), Chih-Han Lin (Hsinchu, Taiwan) and Chia-Yang Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate ...