ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,216,407, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Method and apparatus for multi-spray RRC process with dynamic control" was invented by Ming-Hsuan Chuang (Hsinchu, Taiwan), Po-Sheng Lu (Hsinchu, Taiwan), Shou-Wen Kuo (Hsinchu, Taiwan), Cheng-Yi Huang (Hsinchu, Taiwan) and Chia-Hung Chu (Pingzhen, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed ...