US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 4 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,817, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of forming the same" was invented by Jung-Piao Chiu (Kaohsiung, Taiwan) and Yu-Sheng Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array. The memory cell array includes first-tier word lines extending in a first direction, second-tier word lines disposed below the first-tier word lines and extending in a second direction angularly offset from the first direction, and bit lines extending in a third direction angularly offset from the first and second directions. Th...