US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Memory array source/drain electrode structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,777, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Memory array source/drain electrode structures" was invented by Kuo-Chang Chiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Sheng-Chih Lai (Hsinchu, Taiwan), TsuChing Yang (Taipei, Taiwan) and Yu-Wei Jiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a thin film transistor over a semiconductor substrate, the thin film transistor including: a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed bet...