US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Memory active region layout for improving memory performance" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,747, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory active region layout for improving memory performance" was invented by Chia-Hao Pao (Kaohsiung, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Chih-Hsuan Chen (Hsinchu, Taiwan), Kian-Long Lim (Hsinchu, Taiwan), Chao-Yuan Chang (New Taipei, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan), Lien Jung Hung (Taipei, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "SRAM designs based on GAA transistors are disclosed that provide flexibility for increasing channel widths of...