ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,005, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Integrated circuit device" was invented by Hsia-Wei Chen (Taipei, Taiwan), Fu-Ting Sung (Taoyuan, Taiwan), Yu-Wen Liao (New Taipei, Taiwan), Wen-Ting Chu (Kaohsiung, Taiwan), Fa-Shen Jiang (Taoyuan, Taiwan) and Tzu-Hsuan Yeh (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over...