US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 4 for "Hybrid fin field-effect transistor cell structures and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,141, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Hybrid fin field-effect transistor cell structures and related methods" was invented by Wei-An Lai (Taichung, Taiwan), Hui-Zhong Zhuang (Kaohsiung, Taiwan), Jiann-Tyng Tzeng (Hsin Chu, Taiwan), Wei-Cheng Lin (Taichung, Taiwan), Lipen Yuan (Hsinchu County, Taiwan) and Yan-Hao Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, an integrated circuit cell includes a first circuit component and a second circuit component. The first circuit component includes fin field-effect transistors (finFETs) formed in a high fin ...