US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 4 for "High-density memory device with planar thin film transistor (TFT) selector and methods for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,780, issued on Feb. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High-density memory device with planar thin film transistor (TFT) selector and methods for making the same" was invented by Yen-Chung Ho (Hsinchu, Taiwan), Hui-Hsien Wei (Taoyuan, Taiwan), Mauricio Manfrini (Hsinchu, Taiwan), Chia-Jung Yu (Hsinchu, Taiwan), Yong-Jie Wu (Tainan, Taiwan), Ken-Ichi Goto (Hsinchu, Taiwan) and Pin-Cheng Hsu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and method of making the same, the memory device including bit lines disposed on a substrate; memory cells disposed on the bit lines; a fi...