US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Gate oxide of nanostructure transistor with increased corner thickness" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,197, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate oxide of nanostructure transistor with increased corner thickness" was invented by Shu-Han Chen (Hsinchu, Taiwan), Yi-Shao Li (Hsinchu, Taiwan), Chun-Heng Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semicondu...