US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "FinFET device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,222, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"FinFET device and method of forming same" was invented by Chien-Wei Lee (Kaohsiung, Taiwan), Che-Yu Lin (Hsinchu, Taiwan), Hsueh-Chang Sung (Zhubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on ...