US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 4 for "Contacts for semiconductor devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,209, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Contacts for semiconductor devices and methods of forming the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming contacts to source/drain regions and gate electrodes in low- and high-voltage devices and devices formed by the same are disclosed. In an embodiment a device includes a first channel region in a substrate adjacent a first source/drain region; a first gate over the first channel region; a second channel reg...