US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Semiconductor devices and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,566, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor devices and method for forming the same" was invented by Wen-Sheh Huang (Hsinchu, Taiwan), Yung-Shih Cheng (Hsinchu, Taiwan), Jiing-Feng Yang (Hsinchu County, Taiwan), Yu-Hsiang Chen (Hsinchu, Taiwan) and Chii-Ping Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconn...