US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Semiconductor device structure with conductive bumps" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,552, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with conductive bumps" was invented by Ming-Da Cheng (Taoyuan, Taiwan), Wei-Hung Lin (Xinfeng Township, Hsinchu County, Taiwan), Hui-Min Huang (Taoyuan, Taiwan), Chang-Jung Hsueh (Taipei, Taiwan), Po-Hao Tsai (Taoyuan, Taiwan) and Yung-Sheng Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. ...