US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Selective formation of conductor nanowires" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,551, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Selective formation of conductor nanowires" was invented by Chao-Hsien Peng (Zhubei, Taiwan), Hsiang-Huan Lee (Jhudong Township, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a mandrel layer to form mandrel strips, and selectively depositing metal lines on sidewalls of the mandrel strips. During the selective deposition, top surfaces of the mandrel strips are masked by dielectric masks. The method further includes removing the mandrel layer and the dielectric masks, filling space...